German scientists at the Fraunhofer Institute for Solar Energy Systems (ISE) have announced that they’ve successfully developed a single-crystal silicon solar cell that is made by forming a thin p-type semiconductor layer on an n-type semiconductor substrate.
Measuring 2 X 2cm, the solar cell is capable of converting 23.4% of the sunlight falling on it into useful electricity. The team also claimed that unlike other solar cells, which are touted to be more efficient, their solar cell can easily be mass produced and make available on the market.
According to Fraunhofer ISE, the efficiency of the cell was increased as the team replaced traditional sealing layer materials with aluminum oxide on the side that receives sunlight. As a result, it became possible to develop a solar cell based on an n-type semiconductor substrate without having the problem of sealing.
Measuring 2 X 2cm, the solar cell is capable of converting 23.4% of the sunlight falling on it into useful electricity. The team also claimed that unlike other solar cells, which are touted to be more efficient, their solar cell can easily be mass produced and make available on the market.
According to Fraunhofer ISE, the efficiency of the cell was increased as the team replaced traditional sealing layer materials with aluminum oxide on the side that receives sunlight. As a result, it became possible to develop a solar cell based on an n-type semiconductor substrate without having the problem of sealing.
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